Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain

Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain

10.1109/LED.2008.2010723

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Bibliographic Details
Main Authors: Tan, K.-M., Yang, M., Fang, W.-W., Lim, A.E.-J., Lee, R.T.-P., Liow, T.-Y., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Diamond
Dielectric films
MOS devices
MOSFETs
Strain
Stress
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82871
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82871

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