Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain

Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain

10.1109/LED.2008.2010723

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Bibliographic Details
Main Authors:	Tan, K.-M., Yang, M., Fang, W.-W., Lim, A.E.-J., Lee, R.T.-P., Liow, T.-Y., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Diamond Dielectric films MOS devices MOSFETs Strain Stress
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82871
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Institution:	National University of Singapore

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