Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain

Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain

10.1109/LED.2008.2010723

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Bibliographic Details
Main Authors: Tan, K.-M., Yang, M., Fang, W.-W., Lim, A.E.-J., Lee, R.T.-P., Liow, T.-Y., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Diamond
Dielectric films
MOS devices
MOSFETs
Strain
Stress
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82871
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Institution: National University of Singapore
id sg-nus-scholar.10635-82871
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spelling sg-nus-scholar.10635-828712023-10-25T21:59:22Z Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain Tan, K.-M. Yang, M. Fang, W.-W. Lim, A.E.-J. Lee, R.T.-P. Liow, T.-Y. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Diamond Dielectric films MOS devices MOSFETs Strain Stress 10.1109/LED.2008.2010723 IEEE Electron Device Letters 30 3 250-253 EDLED 2014-10-07T04:34:29Z 2014-10-07T04:34:29Z 2009 Article Tan, K.-M., Yang, M., Fang, W.-W., Lim, A.E.-J., Lee, R.T.-P., Liow, T.-Y., Yeo, Y.-C. (2009). Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain. IEEE Electron Device Letters 30 (3) : 250-253. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2010723 07413106 http://scholarbank.nus.edu.sg/handle/10635/82871 000263920400016 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Diamond
Dielectric films
MOS devices
MOSFETs
Strain
Stress
spellingShingle Diamond
Dielectric films
MOS devices
MOSFETs
Strain
Stress
Tan, K.-M.
Yang, M.
Fang, W.-W.
Lim, A.E.-J.
Lee, R.T.-P.
Liow, T.-Y.
Yeo, Y.-C.
Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain
description 10.1109/LED.2008.2010723
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Tan, K.-M.
Yang, M.
Fang, W.-W.
Lim, A.E.-J.
Lee, R.T.-P.
Liow, T.-Y.
Yeo, Y.-C.
format Article
author Tan, K.-M.
Yang, M.
Fang, W.-W.
Lim, A.E.-J.
Lee, R.T.-P.
Liow, T.-Y.
Yeo, Y.-C.
author_sort Tan, K.-M.
title Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain
title_short Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain
title_full Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain
title_fullStr Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain
title_full_unstemmed Performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain
title_sort performance benefits of diamond-like carbon liner stressor in strained p-channel field-effect transistors with silicon-germanium source and drain
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82871
_version_ 1781784241645813760

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