Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon sourcedrain stressors

Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon sourcedrain stressors

10.1063/1.1871351

Saved in:
Bibliographic Details
Main Authors: Ang, K.-W., Chui, K.-J., Bliznetsov, V., Tung, C.-H., Du, A., Balasubramanian, N., Samudra, G., Li, M.F., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56472
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/56472

Similar Items