Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon sourcedrain stressors

Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon sourcedrain stressors

10.1063/1.1871351

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Bibliographic Details
Main Authors:	Ang, K.-W., Chui, K.-J., Bliznetsov, V., Tung, C.-H., Du, A., Balasubramanian, N., Samudra, G., Li, M.F., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56472
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Institution:	National University of Singapore

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