Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors

Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors

10.1109/LED.2008.920274

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Bibliographic Details
Main Authors: Wong, H.-S., Ang, K.-W., Chan, L., Hoe, K.-M., Tung, C.-H., Balasubramanian, N., Weeks, D., Bauer, M., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
In situ phosphorous-doped
Series resistance
Strain
Thermal budget
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83023
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/83023

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