Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors
10.1109/LED.2008.920274
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sg-nus-scholar.10635-830232023-10-30T07:10:33Z Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors Wong, H.-S. Ang, K.-W. Chan, L. Hoe, K.-M. Tung, C.-H. Balasubramanian, N. Weeks, D. Bauer, M. Spear, J. Thomas, S.G. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING In situ phosphorous-doped Series resistance Strain Thermal budget 10.1109/LED.2008.920274 IEEE Electron Device Letters 29 5 460-463 EDLED 2014-10-07T04:36:19Z 2014-10-07T04:36:19Z 2008-05 Article Wong, H.-S., Ang, K.-W., Chan, L., Hoe, K.-M., Tung, C.-H., Balasubramanian, N., Weeks, D., Bauer, M., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C. (2008-05). Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors. IEEE Electron Device Letters 29 (5) : 460-463. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.920274 07413106 http://scholarbank.nus.edu.sg/handle/10635/83023 000255317400013 Scopus |
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Asia |
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Singapore Singapore |
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In situ phosphorous-doped Series resistance Strain Thermal budget |
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In situ phosphorous-doped Series resistance Strain Thermal budget Wong, H.-S. Ang, K.-W. Chan, L. Hoe, K.-M. Tung, C.-H. Balasubramanian, N. Weeks, D. Bauer, M. Spear, J. Thomas, S.G. Samudra, G. Yeo, Y.-C. Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors |
| description |
10.1109/LED.2008.920274 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Wong, H.-S. Ang, K.-W. Chan, L. Hoe, K.-M. Tung, C.-H. Balasubramanian, N. Weeks, D. Bauer, M. Spear, J. Thomas, S.G. Samudra, G. Yeo, Y.-C. |
| format |
Article |
| author |
Wong, H.-S. Ang, K.-W. Chan, L. Hoe, K.-M. Tung, C.-H. Balasubramanian, N. Weeks, D. Bauer, M. Spear, J. Thomas, S.G. Samudra, G. Yeo, Y.-C. |
| author_sort |
Wong, H.-S. |
| title |
Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors |
| title_short |
Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors |
| title_full |
Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors |
| title_fullStr |
Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors |
| title_full_unstemmed |
Silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors |
| title_sort |
silicon-carbon stressors with high substitutional carbon concentration and in situ doping formed in source/drain extensions of n-channel transistors |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/83023 |
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1781784277702148096 |