Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions

Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions

10.1109/ESSDER.2006.307645

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Bibliographic Details
Main Authors: Ang, K.-W., Chin, H.-C., Chui, K.-J., Li, M.-F., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83528
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83528

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