Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions

Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions

10.1109/ESSDER.2006.307645

Saved in:

Bibliographic Details
Main Authors:	Ang, K.-W., Chin, H.-C., Chui, K.-J., Li, M.-F., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83528
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon-carbon source/drain regions
by: Ang, K.-W., et al.
Published: (2014)

Performance enhancement in uniaxial strained silicon-on-insulator N-MOSFETs featuring silicon-carbon source/drain regions
by: Ang, K.-W., et al.
Published: (2014)

Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost
by: Koh, S.-M., et al.
Published: (2014)

Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressors
by: Ang, K.-W., et al.
Published: (2014)

n-MOSFET with silicon-carbon source/drain for enhancement of carrier transport
by: Chui, K.-J., et al.
Published: (2014)

Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressors
by: Ang, K.-W., et al.
Published: (2014)

Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement
by: Chui, K.-J., et al.
Published: (2014)

Strained silicon-germanium-on-insulator n-MOSFET with embedded silicon source-and-drain stressors
by: Wang, G.H., et al.
Published: (2014)

50 nm silicon-on-insulator N-MOSFET featuring multiple stressors: Silicon-carbon source/drain regions and tensile stress silicon nitride liner
by: Ang, K.-W., et al.
Published: (2014)

Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement
by: Liow, T.-Y., et al.
Published: (2014)

Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions
by: Ang, K.W., et al.
Published: (2014)

Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drain
by: Lee, R.T.P., et al.
Published: (2014)

Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement
by: Ang, K.-W., et al.
Published: (2014)

Strained silicon-germanium-on-insulator N-MOSFETs featuring lattice mismatched source/drain stressor and high-stress silicon nitride liner
by: Wang, G.H., et al.
Published: (2014)

Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance
by: Ang, K.-W., et al.
Published: (2014)

Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure
by: Ang, K.-W., et al.
Published: (2014)

Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner
by: Ang, K.-W., et al.
Published: (2014)

Laser annealing of amorphous germanium on silicon-germanium source/drain for strain and performance enhancement in pMOSFETs
by: Liu, F., et al.
Published: (2014)

Strained silicon-germanium-on-insulator n-channel transistor with silicon source and drain regions for performance enhancement
by: Wang, G.H., et al.
Published: (2014)

Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressors
by: Koh, S.-M., et al.
Published: (2014)

Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance
by: Ang, K.-W., et al.
Published: (2014)

Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETs
by: Koh, S.-M., et al.
Published: (2014)

Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation
by: Koh, S.-M., et al.
Published: (2014)

Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drain
by: Wong, H.-S., et al.
Published: (2014)

Beneath-the-channel Strain-Transfer-Structure (STS) and embedded source/drain stressors for strain and performance enhancement of nanoscale MOSFETs
by: Ang, K.-W., et al.
Published: (2014)

Strain optimization in ultrathin body transistors with silicon-germanium source and drain stressors
by: Madan, A., et al.
Published: (2014)

Silicon-germanium-tin (SiGeSn) source and drain stressors formed by Sn implant and laser annealing for strained silicon-germanium channel P-MOSFETs
by: Wang, G.H., et al.
Published: (2014)

Finite-element study of strain distribution in transistor with silicon-germanium source and drain regions
by: Yeo, Y.-C., et al.
Published: (2014)

Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain
by: Lee, R.T.P., et al.
Published: (2014)

Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence
by: Ang, K.-W., et al.
Published: (2014)

Strained silicon nanowire transistors with germanium source and drain stressors
by: Liow, T.-Y., et al.
Published: (2014)

Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering
by: Zhou, Q., et al.
Published: (2014)

Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement
by: Liow, T.-Y., et al.
Published: (2014)

Study of erbium disilicide and its application in Schottky source/drain silicon nanowire MOSFETs
by: Tan, Eu Jin
Published: (2010)

Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressors
by: Liow, T.-Y., et al.
Published: (2014)

M-V MOSFETs: Surface passivation, source/drain and channel strain engineering, self-aligned contact metallization
by: Yeo, Y.-C., et al.
Published: (2014)

A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's
by: Lou, C.-L., et al.
Published: (2014)

Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs
by: Wang, G.H., et al.
Published: (2014)

Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
by: Tan, K.-M., et al.
Published: (2014)

Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation
by: Koh, S.-M., et al.
Published: (2014)