Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions
10.1109/ESSDER.2006.307645
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2014
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sg-nus-scholar.10635-835282015-02-20T06:08:34Z Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions Ang, K.-W. Chin, H.-C. Chui, K.-J. Li, M.-F. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ESSDER.2006.307645 ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference 89-92 2014-10-07T04:42:14Z 2014-10-07T04:42:14Z 2007 Conference Paper Ang, K.-W.,Chin, H.-C.,Chui, K.-J.,Li, M.-F.,Samudra, G.,Yeo, Y.-C. (2007). Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions. ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference : 89-92. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ESSDER.2006.307645" target="_blank">https://doi.org/10.1109/ESSDER.2006.307645</a> 1424403014 http://scholarbank.nus.edu.sg/handle/10635/83528 NOT_IN_WOS Scopus |
| institution |
National University of Singapore |
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NUS Library |
| country |
Singapore |
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ScholarBank@NUS |
| description |
10.1109/ESSDER.2006.307645 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Ang, K.-W. Chin, H.-C. Chui, K.-J. Li, M.-F. Samudra, G. Yeo, Y.-C. |
| format |
Conference or Workshop Item |
| author |
Ang, K.-W. Chin, H.-C. Chui, K.-J. Li, M.-F. Samudra, G. Yeo, Y.-C. |
| spellingShingle |
Ang, K.-W. Chin, H.-C. Chui, K.-J. Li, M.-F. Samudra, G. Yeo, Y.-C. Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions |
| author_sort |
Ang, K.-W. |
| title |
Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions |
| title_short |
Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions |
| title_full |
Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions |
| title_fullStr |
Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions |
| title_full_unstemmed |
Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions |
| title_sort |
carrier backscattering characteristics of strained n-mosfet featuring silicon-carbon source/drain regions |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/83528 |
| _version_ |
1681089452520243200 |