Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement

10.1109/LED.2006.881083

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Bibliographic Details
Main Authors:	Chui, K.-J., Ang, K.-W., Chin, H.-C., Shen, C., Wong, L.-Y., Tung, C.-H., Balasubramanian, N., Li, M.F., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	nMOSFET Silicon-carbon Tensile-strained
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83088
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83088
record_format	dspace
spelling	sg-nus-scholar.10635-830882023-10-29T20:58:06Z Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement Chui, K.-J. Ang, K.-W. Chin, H.-C. Shen, C. Wong, L.-Y. Tung, C.-H. Balasubramanian, N. Li, M.F. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING nMOSFET Silicon-carbon Tensile-strained 10.1109/LED.2006.881083 IEEE Electron Device Letters 27 9 778-780 EDLED 2014-10-07T04:37:07Z 2014-10-07T04:37:07Z 2006-09 Article Chui, K.-J., Ang, K.-W., Chin, H.-C., Shen, C., Wong, L.-Y., Tung, C.-H., Balasubramanian, N., Li, M.F., Samudra, G.S., Yeo, Y.-C. (2006-09). Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement. IEEE Electron Device Letters 27 (9) : 778-780. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.881083 07413106 http://scholarbank.nus.edu.sg/handle/10635/83088 000240008800023 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	nMOSFET Silicon-carbon Tensile-strained
spellingShingle	nMOSFET Silicon-carbon Tensile-strained Chui, K.-J. Ang, K.-W. Chin, H.-C. Shen, C. Wong, L.-Y. Tung, C.-H. Balasubramanian, N. Li, M.F. Samudra, G.S. Yeo, Y.-C. Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement
description	10.1109/LED.2006.881083
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Chui, K.-J. Ang, K.-W. Chin, H.-C. Shen, C. Wong, L.-Y. Tung, C.-H. Balasubramanian, N. Li, M.F. Samudra, G.S. Yeo, Y.-C.
format	Article
author	Chui, K.-J. Ang, K.-W. Chin, H.-C. Shen, C. Wong, L.-Y. Tung, C.-H. Balasubramanian, N. Li, M.F. Samudra, G.S. Yeo, Y.-C.
author_sort	Chui, K.-J.
title	Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement
title_short	Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement
title_full	Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement
title_fullStr	Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement
title_full_unstemmed	Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement
title_sort	strained-soi n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83088
_version_	1781784297237118976

Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancement

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