Charge-based capacitance measurement technique for nanoscale devices: Accuracy assessment based on TCAD simulations

• Main Authors: Zhao, H., Rustagi, S.C., Ma, F.-J., Samudra, G.S., Singh, N., Lo, G.Q., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Charge-based capacitance measurement (CBCM) technique; Nanoscale devices; Nanowire MOSFETs; Sub-femtofarad capacitance measurements; Transient TCAD simulations
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/55287
• Institution: National University of Singapore

10.1109/TED.2009.2016396