Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling

• Main Authors: Chen, G., Li, M.F., Ang, C.H., Zheng, J.Z., Kwong, D.L.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Others
• Published: 2014
• Subjects: Annealing; CMOSFETs; Negative bias temperature instability (NBTI); Semiconductor-insulator interfaces; Ultrathin gate oxide
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/67902
• Institution: National University of Singapore

10.1109/LED.2002.805750