Thermal cure study of a low-k methyl silsesquioxane for intermetal dielectric application by FT-IR spectroscopy

by Wang, C.Y., Shen, Z.X., Zheng, J.Z.
Published 2014

High-temperature properties of a low dielectric constant organic spin-on glass for multilevel interconnects

by Wang, C.Y., Shen, Z.X., Zheng, J.Z.
Published 2014

FT-IR study of the imidization process of photosensitive polyimide PMDA/ODA

by Li, W.S., Shen, Z.X., Zheng, J.Z., Tang, S.H.
Published 2014

Interface reconstruction of MSi2 Si(001) (M=Co,Ni) from first principles

by Zhao, F.F., Feng, Y.P., Dong, Y.F., Zheng, J.Z.
Published 2014

Elimination of O2 plasma damage of low-k methyl silsesquioxane film by As implantation

by Wang, C.Y., Zheng, J.Z., Shen, Z.X., Lin, Y., Wee, A.T.S.
Published 2014

Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling

by Chen, G., Li, M.F., Ang, C.H., Zheng, J.Z., Kwong, D.L.
Published 2014

Thermal stability study of NiSi and NiSi2 thin films

by Zhao, F.F., Zheng, J.Z., Shen, Z.X., Osipowicz, T., Gao, W.Z., Chan, L.H.
Published 2014

The statistical distribution of percolation current for soft breakdown in ultrathin gate oxide

by Lin, W.H., Pey, K.L., Dong, Z., Chooi, S.Y.M., Ang, C.H., Zheng, J.Z.
Published 2014

The statistical distribution of percolation current for soft breakdown in ultrathin gate oxide

by Lin, W.H., Pey, K.L., Dong, Z., Chooi, S.Y.M., Ang, C.H., Zheng, J.Z.
Published 2014

Characterization of HfO2/Si(0 0 1) interface with high-resolution rutherford backscattering spectroscopy

by Nakajima, K., Joumori, S., Suzuki, M., Kimura, K., Osipowicz, T., Tok, K.L., Zheng, J.Z., See, A., Zhang, B.C.
Published 2014

Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy

by Nakajima, K., Joumori, S., Suzuki, M., Kimura, K., Osipowicz, T., Tok, K.L., Zheng, J.Z., See, A., Zhang, B.C.
Published 2014

Characterization of a low-k organic spin-on-glass as an intermetal dielectric

by Wang, C.Y., Zheng, J.Z., Shen, Z.X., Xu, Y., Lim, S.L., Liu, R., Huan, A.C.H.
Published 2014

Applications of micro-Raman spectroscopy in salicide characterization for Si device fabrication

by Zhao, F.F., Chen, S.Y., Shen, Z.X., Gao, X.S., Zheng, J.Z., See, A.K., Chan, L.H.
Published 2014

Thickness effect on nickel silicide formation and thermal stability for ultra shallow junction CMOS

by Zhao, F.F., Shen, Z.X., Zheng, J.Z., Gao, W.Z., Osipowicz, T., Pang, C.H., Lee, P.S., See, A.K.
Published 2014

Approach to interface roughness of silicide thin films by micro-Raman imaging

by Zhao, F.F., Sun, W.X., Feng, Y.P., Zheng, J.Z., Shen, Z.X., Pang, C.H., Chan, L.H.
Published 2014

Localized oxide degradation in ultrathin gate dielectric and its statistical analysis

by Loh, W.Y., Cho, B.J., Li, M.F., Chan, D.S.H., Ang, C.H., Zheng, J.Z., Kwong, D.L.
Published 2014

Dynamic NBTI of PMOS transistors and its impact on device lifetime

by Chen, G., Chuah, K.Y., Li, M.F., Chan, D.S.H., Ang, C.H., Zheng, J.Z., Jin, Y., Kwong, D.L.
Published 2014

Energy gap and band alignment for (HfO2)x(Al 2O3)1-x on (100) Si

by Yu, H.Y., Li, M.F., Cho, B.J., Yeo, C.C., Joo, M.S., Kwong, D.-L., Pan, J.S., Ang, C.H., Zheng, J.Z., Ramanathan, S.
Published 2014

Effects of first rapid thermal annealing temperature on Co silicide formation

by Peng, H.J., Shen, Z.X., Lim, E.H., Lai, C.W., Liu, R., Wee, A.T.S., Sameer, A., Dai, J.Y., Zhang, B.C., Zheng, J.Z.
Published 2014

Thermal stability of (HfO2)x(Al2O 3)1-x on Si

by Yu, H.Y., Wu, N., Li, M.F., Zhu, C., Cho, B.J., Kwong, D.-L., Tung, C.H., Pan, J.S., Chai, J.W., Wang, W.D., Chi, D.Z., Ang, C.H., Zheng, J.Z., Ramanathan, S.
Published 2014