Surface-electrode ion trap with ground structures for minimizing the dielectric loss in the Si substrate

• المؤلفون الرئيسيون: Tao, Jing, Li, Hong Yu, Lim, Yu Dian, Zhao, Peng, Apriyana, Anak Agung Alit, Guidoni, Luca, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors; Qubit; Trapped Ion
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/148249

The surface-electrode ion trap is one of the key devices in modern ion-trapping apparatus to host the ion qubits for quantum computing. Surface traps fabricated on the silicon substrate have the versatility for complex electrode fabrication with 3-D integration capability. However, Si-induced dielec...