TSV-integrated surface electrode ion trap for scalable quantum information processing
In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary geometry design with increasing electrodes numbers and evolving...
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Main Authors: | , , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2021
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/148248 |
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Institution: | Nanyang Technological University |
Language: | English |