TSV-integrated surface electrode ion trap for scalable quantum information processing

• المؤلفون الرئيسيون: Zhao, Peng, Likforman, J. P., Li, Hong Yu, Tao, Jing, Henner, T., Lim, Yu Dian, Seit, W. W., Tan, Chuan Seng, Guidoni, Luca
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors; Science::Physics; Qubit; TSV
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/148248

In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary geometry design with increasing electrodes numbers and evolving...