RF performance benchmarking of TSV integrated surface electrode ion trap for quantum computing
Surface electrode ion trap is highly promising for practical quantum computing due to its superior controllability on the trapped ions. With advanced microfabrication techniques, silicon has been developed as ion trap substrate for delicate surface electrodes design as well as monolithic electro-opt...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2021
|
| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/153006 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|