Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximation

Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximation

10.1109/16.925246

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Bibliographic Details
Main Authors: Hou, Y.T., Li, M.-F.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
CMOSFETs
Inversion quantization
Quantum mechanical effects
Semiconductor device modeling
Threshold voltage
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80543
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/80543

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