Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximation

10.1109/16.925246

Saved in:

Bibliographic Details
Main Authors:	Hou, Y.T., Li, M.-F.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	CMOSFETs Inversion quantization Quantum mechanical effects Semiconductor device modeling Threshold voltage
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80543
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-80543
record_format	dspace
spelling	sg-nus-scholar.10635-805432023-10-29T20:57:57Z Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximation Hou, Y.T. Li, M.-F. ELECTRICAL ENGINEERING ELECTRICAL & COMPUTER ENGINEERING CMOSFETs Inversion quantization Quantum mechanical effects Semiconductor device modeling Threshold voltage 10.1109/16.925246 IEEE Transactions on Electron Devices 48 6 1188-1193 IETDA 2014-10-07T02:58:41Z 2014-10-07T02:58:41Z 2001-06 Article Hou, Y.T., Li, M.-F. (2001-06). Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximation. IEEE Transactions on Electron Devices 48 (6) : 1188-1193. ScholarBank@NUS Repository. https://doi.org/10.1109/16.925246 00189383 http://scholarbank.nus.edu.sg/handle/10635/80543 000169044500026 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	CMOSFETs Inversion quantization Quantum mechanical effects Semiconductor device modeling Threshold voltage
spellingShingle	CMOSFETs Inversion quantization Quantum mechanical effects Semiconductor device modeling Threshold voltage Hou, Y.T. Li, M.-F. Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximation
description	10.1109/16.925246
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Hou, Y.T. Li, M.-F.
format	Article
author	Hou, Y.T. Li, M.-F.
author_sort	Hou, Y.T.
title	Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximation
title_short	Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximation
title_full	Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximation
title_fullStr	Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximation
title_full_unstemmed	Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximation
title_sort	hole quantization effects and threshold voltage shift in pmosfet - assessed by improved one-band effective mass approximation
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80543
_version_	1781783918529216512

Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximation

Similar Items