Read and Write Voltage Signal Optimization for Multi-Level-Cell (MLC) NAND Flash Memory

• المؤلفون الرئيسيون: Aslam, Chaudhry Adnan, Guan, Yong Liang, Cai, Kui
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2016
• الموضوعات: Microprocessors; Decoding; Interference; Programming; Quantization (signal); Threshold voltage; Computer architecture
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/80559; http://hdl.handle.net/10220/40548

The multi-level-cell (MLC) NAND flash channel exhibits nonstationary behavior over increasing program and erase (PE) cycles and data retention time. In this paper, an optimization scheme for adjusting the read (quantized) and write (verify) voltage levels to adapt to the nonstationary flash channel...