Read and Write Voltage Signal Optimization for Multi-Level-Cell (MLC) NAND Flash Memory

• Main Authors: Aslam, Chaudhry Adnan, Guan, Yong Liang, Cai, Kui
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: Microprocessors; Decoding; Interference; Programming; Quantization (signal); Threshold voltage; Computer architecture
• Online Access: https://hdl.handle.net/10356/80559; http://hdl.handle.net/10220/40548
• Institution: Nanyang Technological University

The multi-level-cell (MLC) NAND flash channel exhibits nonstationary behavior over increasing program and erase (PE) cycles and data retention time. In this paper, an optimization scheme for adjusting the read (quantized) and write (verify) voltage levels to adapt to the nonstationary flash channel...