Read and Write Voltage Signal Optimization for Multi-Level-Cell (MLC) NAND Flash Memory
The multi-level-cell (MLC) NAND flash channel exhibits nonstationary behavior over increasing program and erase (PE) cycles and data retention time. In this paper, an optimization scheme for adjusting the read (quantized) and write (verify) voltage levels to adapt to the nonstationary flash channel...
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/80559 http://hdl.handle.net/10220/40548 |
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| Institution: | Nanyang Technological University |
| Language: | English |