High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET
10.1109/LED.2003.814011
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2014
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sg-nus-scholar.10635-844112023-10-26T08:11:44Z High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET Ang, D.S. Phua, T.W.H. Liao, H. Ling, C.H. ELECTRICAL & COMPUTER ENGINEERING Charge pumping current High-energy tail Hot-carrier stress Interface states N-MOSFET 10.1109/LED.2003.814011 IEEE Electron Device Letters 24 7 469-471 EDLED 2014-10-07T04:52:22Z 2014-10-07T04:52:22Z 2003-07 Others Ang, D.S., Phua, T.W.H., Liao, H., Ling, C.H. (2003-07). High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET. IEEE Electron Device Letters 24 (7) : 469-471. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.814011 07413106 http://scholarbank.nus.edu.sg/handle/10635/84411 000184454900017 Scopus |
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Asia |
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Singapore Singapore |
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Charge pumping current High-energy tail Hot-carrier stress Interface states N-MOSFET |
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Charge pumping current High-energy tail Hot-carrier stress Interface states N-MOSFET Ang, D.S. Phua, T.W.H. Liao, H. Ling, C.H. High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET |
| description |
10.1109/LED.2003.814011 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Ang, D.S. Phua, T.W.H. Liao, H. Ling, C.H. |
| format |
Others |
| author |
Ang, D.S. Phua, T.W.H. Liao, H. Ling, C.H. |
| author_sort |
Ang, D.S. |
| title |
High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET |
| title_short |
High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET |
| title_full |
High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET |
| title_fullStr |
High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET |
| title_full_unstemmed |
High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET |
| title_sort |
high-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer n-mosfet |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/84411 |
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1781784449129644032 |