High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

• Main Authors: Ang, D.S., Phua, T.W.H., Liao, H., Ling, C.H.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Others
• Published: 2014
• Subjects: Charge pumping current; High-energy tail; Hot-carrier stress; Interface states; N-MOSFET
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84411
• Institution: National University of Singapore

10.1109/LED.2003.814011