Ion irradiation-induced interface mixing and the charge trap profiles investigated by in situ electrical measurements in Pt/Al₂O₃/β-Ga₂O₃MOSCAPs

• المؤلفون الرئيسيون: Manikanthababu, N., Joishi, C., Biswas, J., Prajna, K., Asokan, K., Vas, Joseph Vimal, Medwal, R., Meena, R.C., Lodha, S., Singh, R.
• مؤلفون آخرون: School of Materials Science and Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Materials; Transmission Electron Microscopy; Charge Trapping
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/170740
• المؤسسة: Nanyang Technological University

In situ I - V and C-V measurements were performed during the 120 MeV Au9+ ion irradiation on the Pt/Al2O3/β-Ga2O3, metal-oxide-semiconductor capacitors (MOSCAPs), to comprehend the swift heavy ion (SHI)-induced effects at the interface and in the device performance. At a maximum fluence of 2× 1012 i...