Ion irradiation-induced interface mixing and the charge trap profiles investigated by in situ electrical measurements in Pt/Al₂O₃/β-Ga₂O₃MOSCAPs

Ion irradiation-induced interface mixing and the charge trap profiles investigated by in situ electrical measurements in Pt/Al₂O₃/β-Ga₂O₃MOSCAPs

In situ I - V and C-V measurements were performed during the 120 MeV Au9+ ion irradiation on the Pt/Al2O3/β-Ga2O3, metal-oxide-semiconductor capacitors (MOSCAPs), to comprehend the swift heavy ion (SHI)-induced effects at the interface and in the device performance. At a maximum fluence of 2× 1012 i...

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書目詳細資料
Main Authors:	Manikanthababu, N., Joishi, C., Biswas, J., Prajna, K., Asokan, K., Vas, Joseph Vimal, Medwal, R., Meena, R.C., Lodha, S., Singh, R.
其他作者:	School of Materials Science and Engineering
格式:	Article
語言:	English
出版:	2023
主題:	Engineering::Materials Transmission Electron Microscopy Charge Trapping
在線閱讀:	https://hdl.handle.net/10356/170740
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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