Ion irradiation-induced interface mixing and the charge trap profiles investigated by in situ electrical measurements in Pt/Al₂O₃/β-Ga₂O₃MOSCAPs
In situ I - V and C-V measurements were performed during the 120 MeV Au9+ ion irradiation on the Pt/Al2O3/β-Ga2O3, metal-oxide-semiconductor capacitors (MOSCAPs), to comprehend the swift heavy ion (SHI)-induced effects at the interface and in the device performance. At a maximum fluence of 2× 1012 i...
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| Main Authors: | , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/170740 |
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| Institution: | Nanyang Technological University |
| Language: | English |