Charge carrier generation/trapping mechanisms in HfO2/SiO2 stack

Charge carrier generation/trapping mechanisms in HfO2/SiO2 stack

10.1016/j.mee.2007.04.084

Saved in:
Bibliographic Details
Main Authors: Samanta, P., Zhu, C., Chan, M.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Acceptor and donor-like interface traps
Border traps
Hafnium oxide
High-k
Proton transport
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82048
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82048

Similar Items