Charge carrier generation/trapping mechanisms in HfO2/SiO2 stack

• Main Authors: Samanta, P., Zhu, C., Chan, M.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Acceptor and donor-like interface traps; Border traps; Hafnium oxide; High-k; Proton transport
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82048
• Institution: National University of Singapore

10.1016/j.mee.2007.04.084