Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

10.1016/j.tsf.2004.05.017

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Bibliographic Details
Main Authors: Mathew, S., Bera, L.K., Balasubramanian, N., Joo, M.S., Cho, B.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Charge trapping
HfAlO
High-k dielectrics
Mobility
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82034
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82034

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