Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs
10.1016/j.tsf.2004.05.017
Saved in:
Main Authors: | Mathew, S., Bera, L.K., Balasubramanian, N., Joo, M.S., Cho, B.J. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82034 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
PATTERNING OF HAFNIUM ALUMINIUM OXIDE/POLY-SI GATE STACK FOR ADVANCED CMOS APPLICATIONS
by: ARDIANTO WIRASENTANA
Published: (2019) -
The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodes
by: Yu, X., et al.
Published: (2014) -
Characteristics of self-aligned gate-first Ge p- and n-channel MOSFETs using CVD HfO2 gate dielectric and Si surface passivation
by: Wu, N., et al.
Published: (2014) -
Investigation of high-K gate dielectrics for advanced CMOS application
by: YU XIONG FEI
Published: (2011) -
Reliability analysis of thin HfO2/SiO2 gate dielectric stack
by: Samanta, P., et al.
Published: (2014)