Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structures

Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structures

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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Bibliographic Details
Main Authors: Yue, J.M.P., Chim, W.K., Cho, B.J., Chan, D.S.H., Qin, W.H., Kim, Y.B., Jang, S.A., Yeo, I.S.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72517
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/72517

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