Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structures

• Main Authors: Yue, J.M.P., Chim, W.K., Cho, B.J., Chan, D.S.H., Qin, W.H., Kim, Y.B., Jang, S.A., Yeo, I.S.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/72517
• Institution: National University of Singapore

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA