New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs

Annual Proceedings - Reliability Physics (Symposium)

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Bibliographic Details
Main Authors: Leang, S.E., Chan, D.S.H., Chim, W.K.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72793
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Institution: National University of Singapore