Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique

Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA

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Bibliographic Details
Main Authors: Leang, S.E., Chan, D.S.H., Chim, W.K.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81386
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Institution: National University of Singapore