Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique

Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA

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Main Authors:	Leang, S.E., Chan, D.S.H., Chim, W.K.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81386
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81386
record_format	dspace
spelling	sg-nus-scholar.10635-813862015-02-21T18:44:48Z Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique Leang, S.E. Chan, D.S.H. Chim, W.K. ELECTRICAL ENGINEERING Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA 96-101 234 2014-10-07T03:07:45Z 2014-10-07T03:07:45Z 1995 Conference Paper Leang, S.E.,Chan, D.S.H.,Chim, W.K. (1995). Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique. Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA : 96-101. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/81386 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Leang, S.E. Chan, D.S.H. Chim, W.K.
format	Conference or Workshop Item
author	Leang, S.E. Chan, D.S.H. Chim, W.K.
spellingShingle	Leang, S.E. Chan, D.S.H. Chim, W.K. Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique
author_sort	Leang, S.E.
title	Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique
title_short	Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique
title_full	Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique
title_fullStr	Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique
title_full_unstemmed	Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique
title_sort	characterization of hot-carrier degradation in non-isolated mosfets using a new gate-current measurement technique
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81386
_version_	1681089061790416896

Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique

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