Comparative study on the channel hot-carrier degradation of N- and P-MOSFETs with CVD tungsten polycide gate
Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA
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Main Authors: | , , , |
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Other Authors: | |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81390 |
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Institution: | National University of Singapore |