Comparative study on the channel hot-carrier degradation of N- and P-MOSFETs with CVD tungsten polycide gate

Comparative study on the channel hot-carrier degradation of N- and P-MOSFETs with CVD tungsten polycide gate

Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA

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Bibliographic Details
Main Authors: Low, C.L., Chim, W.K., Chan, D.S.H., Pan, Y.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81390
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/81390

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