Leang, S., Chan, D., Chim, W., & ENGINEERING, E. (2014). New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs.
Chicago Style CitationLeang, S.E., D.S.H Chan, W.K Chim, and ELECTRICAL ENGINEERING. New Purely-experimental Technique for Extracting the Spatial Distribution of Hot-carrier-induced Interface States and Trapped Charges in MOSFETs. 2014.
MLA引文Leang, S.E., D.S.H Chan, W.K Chim, and ELECTRICAL ENGINEERING. New Purely-experimental Technique for Extracting the Spatial Distribution of Hot-carrier-induced Interface States and Trapped Charges in MOSFETs. 2014.
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