Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy

Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy

10.1088/0022-3727/30/17/007

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Bibliographic Details
Main Authors: Chim, W.K., Chan, D.S.H., Tao, J.M., Lou, C.L., Leang, S.E., Teow, C.K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80361
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/80361

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