Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy

• Main Authors: Chim, W.K., Chan, D.S.H., Tao, J.M., Lou, C.L., Leang, S.E., Teow, C.K.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/80361
• Institution: National University of Singapore

10.1088/0022-3727/30/17/007