Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy

10.1088/0022-3727/30/17/007

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Main Authors: Chim, W.K., Chan, D.S.H., Tao, J.M., Lou, C.L., Leang, S.E., Teow, C.K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80361
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-803612023-10-25T21:59:23Z Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy Chim, W.K. Chan, D.S.H. Tao, J.M. Lou, C.L. Leang, S.E. Teow, C.K. ELECTRICAL ENGINEERING 10.1088/0022-3727/30/17/007 Journal of Physics D: Applied Physics 30 17 2411-2420 JPAPB 2014-10-07T02:56:41Z 2014-10-07T02:56:41Z 1997-09-07 Article Chim, W.K., Chan, D.S.H., Tao, J.M., Lou, C.L., Leang, S.E., Teow, C.K. (1997-09-07). Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy. Journal of Physics D: Applied Physics 30 (17) : 2411-2420. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/30/17/007 00223727 http://scholarbank.nus.edu.sg/handle/10635/80361 A1997XW06100007 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1088/0022-3727/30/17/007
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Chim, W.K.
Chan, D.S.H.
Tao, J.M.
Lou, C.L.
Leang, S.E.
Teow, C.K.
format Article
author Chim, W.K.
Chan, D.S.H.
Tao, J.M.
Lou, C.L.
Leang, S.E.
Teow, C.K.
spellingShingle Chim, W.K.
Chan, D.S.H.
Tao, J.M.
Lou, C.L.
Leang, S.E.
Teow, C.K.
Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy
author_sort Chim, W.K.
title Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy
title_short Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy
title_full Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy
title_fullStr Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy
title_full_unstemmed Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy
title_sort distinguishing the effects of oxide trapped charges and interface states in ddd and latid nmosfets using photon emission spectroscopy
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/80361
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