Characterization of the plasma-induced effective mobility degradation of LATID NMOSFETs

Characterization of the plasma-induced effective mobility degradation of LATID NMOSFETs

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

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Bibliographic Details
Main Authors: Lou, C.L., Song, J., Tan, C.B., Chim, W.K., Chan, D.S.H., Pan, Y.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81388
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/81388

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