Distinguishing the effects of oxide trapped charges and interface states in DDD and LATID nMOSFETs using photon emission spectroscopy
10.1088/0022-3727/30/17/007
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Main Authors: | Chim, W.K., Chan, D.S.H., Tao, J.M., Lou, C.L., Leang, S.E., Teow, C.K. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80361 |
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Institution: | National University of Singapore |
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