Reverse short channel effects in nMOSFETs
Rapid advancement of the Metal-Oxide-Semiconductor (MOS) transistor in the last two decades has seen the approach of the 0.18um technology. However, this has caused phenomena that had not been previously observed. Two of these are the Reverse Short Channel Effects (RSCE) and the Transient Enhanced D...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2008
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/13234 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |