Experimental and analytical characterization of short channel MOSFETS
Present the characterization of deep-sub-micrometer lightly-Doped Drain pMOSFETS operating in a Bi-MOS structure.
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Format: | Research Report |
Published: |
2008
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Online Access: | http://hdl.handle.net/10356/2722 |
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Institution: | Nanyang Technological University |