Measuring and characterizing sub-micron MOSFETs

• 主要作者: Lin, Hong.
• 其他作者: Liu, Po Ching
• 格式: Theses and Dissertations
• 出版: 2008
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• 在線閱讀: http://hdl.handle.net/10356/4704

In this thesis, a semi-empirical IDS - VDS model for sub-micron Lightly-Doped Drain (LDD) MOSFETs is proposed with an improvement in the strong inversion region. The proposed model is based on the principle of the conventional n-channel enhancement mode MOSFET by taking into consideration the variou...