Measuring and characterizing sub-micron MOSFETs
In this thesis, a semi-empirical IDS - VDS model for sub-micron Lightly-Doped Drain (LDD) MOSFETs is proposed with an improvement in the strong inversion region. The proposed model is based on the principle of the conventional n-channel enhancement mode MOSFET by taking into consideration the variou...
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/4704 |
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| Institution: | Nanyang Technological University |
| Summary: | In this thesis, a semi-empirical IDS - VDS model for sub-micron Lightly-Doped Drain (LDD) MOSFETs is proposed with an improvement in the strong inversion region. The proposed model is based on the principle of the conventional n-channel enhancement mode MOSFET by taking into consideration the various phenomena associated with the LDD structure for very short channel MOSFFET devices. The important short-channel device features: Drain-Induced-Barrier-Lowering (DIBL), Channel-Length Modulation (CLM), mobility degradation, velocity saturation, the source/drain parasitic resistance etc. have been considered in the proposed model. |
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