Characterization of flicker noise in sub-micron NMOS device

• Main Author: Myo Thant Win.
• Other Authors: Yeo, Kiat Seng
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• Online Access: http://hdl.handle.net/10356/4919
• Institution: Nanyang Technological University

Nowadays MOS device sizes and signal levels are aggressively scaled down, the low-frequency noise (LFN) properties become increasingly important. This is because the signals are no longer significantly higher than the LFN, especially since the LFN level increases significantly as the device's s...