Characterization of flicker noise in sub-micron NMOS device

Characterization of flicker noise in sub-micron NMOS device

Nowadays MOS device sizes and signal levels are aggressively scaled down, the low-frequency noise (LFN) properties become increasingly important. This is because the signals are no longer significantly higher than the LFN, especially since the LFN level increases significantly as the device's s...

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Main Author: Myo Thant Win.
Other Authors: Yeo, Kiat Seng
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Online Access:http://hdl.handle.net/10356/4919
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-49192023-07-04T16:23:34Z Characterization of flicker noise in sub-micron NMOS device Myo Thant Win. Yeo, Kiat Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Nowadays MOS device sizes and signal levels are aggressively scaled down, the low-frequency noise (LFN) properties become increasingly important. This is because the signals are no longer significantly higher than the LFN, especially since the LFN level increases significantly as the device's size is scaled down. The aforementioned reasons have motivated our investigation of 1/f noise in MOS transistor. In this project, the characterization of low frequency noise in n-channel metal-oxide semiconductor (NMOS) devices fabricated using minimum channel length of 0.13^m technologies are experimentally evaluated and compared. Master of Science (Consumer Electronics) 2008-09-17T10:01:27Z 2008-09-17T10:01:27Z 2004 2004 Thesis http://hdl.handle.net/10356/4919 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Myo Thant Win.
Characterization of flicker noise in sub-micron NMOS device
description Nowadays MOS device sizes and signal levels are aggressively scaled down, the low-frequency noise (LFN) properties become increasingly important. This is because the signals are no longer significantly higher than the LFN, especially since the LFN level increases significantly as the device's size is scaled down. The aforementioned reasons have motivated our investigation of 1/f noise in MOS transistor. In this project, the characterization of low frequency noise in n-channel metal-oxide semiconductor (NMOS) devices fabricated using minimum channel length of 0.13^m technologies are experimentally evaluated and compared.
author2 Yeo, Kiat Seng
author_facet Yeo, Kiat Seng
Myo Thant Win.
format Theses and Dissertations
author Myo Thant Win.
author_sort Myo Thant Win.
title Characterization of flicker noise in sub-micron NMOS device
title_short Characterization of flicker noise in sub-micron NMOS device
title_full Characterization of flicker noise in sub-micron NMOS device
title_fullStr Characterization of flicker noise in sub-micron NMOS device
title_full_unstemmed Characterization of flicker noise in sub-micron NMOS device
title_sort characterization of flicker noise in sub-micron nmos device
publishDate 2008
url http://hdl.handle.net/10356/4919
_version_ 1772828341543370752

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