Measuring and characterizing sub-micron MOSFETs

• Main Author: Lin, Hong.
• Other Authors: Liu, Po Ching
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• Online Access: http://hdl.handle.net/10356/4704
• Institution: Nanyang Technological University

In this thesis, a semi-empirical IDS - VDS model for sub-micron Lightly-Doped Drain (LDD) MOSFETs is proposed with an improvement in the strong inversion region. The proposed model is based on the principle of the conventional n-channel enhancement mode MOSFET by taking into consideration the variou...